Samsung announced the development of its new memory chips Universal Flash Storage 4.0 (UFS 4.0), which will become very popular in a new generation of high-end mobile devices thanks to its speed, and that is that double the bandwidth compared to the current UFS 3.1 memory, which results in reaching the 23.2 Gbps per lane.
As for the specifications, these are complemented by the use of the 7th generation of V-NAND memory chips with a proprietary controller to achieve read speeds of up to 4200 MB/s with a write speed of up to 2800 MB/sall this promises a reduction in energy consumption of 46% (6 MB/s for each mA consumed), which will increase the autonomy of high-end smartphones, and reach maximum storage capacities of 1 TB.
“Samsung’s UFS 4.0 technology implements the latest JEDEC standard specification and enhances our diverse portfolio. Our UFS mobile storage solutions differentiate key technologies in controller design to improve performance and power efficiency.
By collaborating with smartphone and consumer device manufacturers around the world, we are working hard to foster an ecosystem for UFS 4.0 that drives the market for high-performance mobile storage solutions. »