Samsung would show its most advanced manufacturing process this week, the EAG 3nm, to the President of the United States, Joe Biden. As noted, it will be this week that the president visits the Korean giant’s campus in the city of Pyeongtaek, and at a time when the entire industry is short of chips, Samsung wants to try to win a powerful ally and a customerwhich begins its most advanced manufacturing process, of which, so far, no official report reveals which companies are interested or have already reached an agreement for its use.
The US president is reportedly heading to Seoul for a three-day visit, and according to local South Korean media Yonhap, the visit will include a visit to Samsung’s facilities in Pyeongtaek, which are also the largest in the world and are located around 70 kilometers south of Seoul. In addition to Biden, it is said that vice president of samsungLee Jae-yong will accompany you on the tour to show the mass production process of his next-generation manufacturing process.
For several months, it has been reported that Samsung will start mass production of its 3nm Gate-All-Around (GAA) technology. Last April, the company said it would start the mass production process 3GAE (3 nm) during this trimester. Thanks to this, the company will go through two stages: to be the first to offer a 3nm manufacturing process of the industry (at least on paper, there is no mention of densities), in addition to being the first to use a manufacturing process with a design GAAFET (FET gate all around). 3GAE = at 3nm GAAFET.
According to Samsung, its manufacturing process for 3nm reduces overall silicon size 35 percent regarding the 5nm FinFET manufacturing process. In addition to being smaller, it promises a decrease in energy consumption about 50 percentwhile performance increases by 33 percent and transistor density increases 80%.