Home » Samsung manages to reduce the consumption of its 3 nm node by 50%

Samsung manages to reduce the consumption of its 3 nm node by 50%

Samsung It is not going through a good period if we talk about its manufacturing nodes. Of their 8nm used for graphics cards NVIDIA-RTX 30through its most advanced nodes of 5, 4 and up to 3nm future. These latter (Samsung 3nmGAA) have been announcing low interest rates for some time yield less than 50%, but now comes Samsung itself to Deny this and also, announce the improvements of its future 3 nm node.

Samsung’s new build nodes have been in the news for a few years knowing that in 2021, very low data rates have been reported for its 5 nm nodes. This drive away customers such as NVIDIA and Qualcomm, but Samsung wanted to take matters into their own hands, now claiming that the performance rate improved and that the process 3nm is in mass productionaccording to its board of directors. This came after Samsung’s meeting to show Q1 2022 results, during which Samsung officials denied rumors that returns were too low.

Samsung’s first 3nm GAA MBCFET transistors

Samsung GAA 3nm

Continuing with the comment, Samsung stated that the process of 5nm entered the phase of maturity and continues to expand its services. Regarding the process of 4nmthis one entered its curve expected performance despite a delay in the performance improvement process. Finally, for the process 3nma future line of R&D Manufacturing. This 3 nm node would be Samsung’s bet for catch up with TSMCwith the particularity that it will not use FINFET, but transistors Gate-All-Array (GAA).

MBCFET technology with GAA transistors stacked in nanosheets

Samsung 3nm MBCFET Nanosheet

This new 3nm process would also have multi-bridge-channel FET technology (MBCFET), in which nanometer-sized GAA transistors would be stacked forming “nanosheetsas Samsung mentions, dramatically improving performance and solving stacking issues present in previous technologies.

These GAA transistors, associated with MBCFET technology, would offer a advantage considerable compared to the FINFETs that TSMC would use in its 3nm process, as they will require a lower voltage to operatei.e. they will offer a best performance/watt. This is a very important factor when developing new processors, because the market trend is more and more consumption and power.

Finally, according to Samsung, this new 3nm GAA node with MBCFET will offer us:

  • 50% reduction in energy consumption.
  • 35% performance improvement.
  • 45% area reduction.

At a time like this, where going deeper and deeper into nanometers and being close to the Moore’s Law limit doesn’t seem like a substantial improvement to us, an alternative that improves on the traditional FINFET might work. Now we just have to wait to see this mass production announced by Samsung.

VIA: My Drivers

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