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Samsung is already developing 36Gbps GDDR7 memory for GPUs

Samsung Electronics announced what will be the next generation of high-performance memory for GPUs, the GDDR7. Designed for the next generation of data centers, high-performance computing and high-end GPUs, this memory Samsung GDDR7 arrive at 36 GbpsSo yes, a future high-end GPU will be even more expensive. As an indication, the memory GDDR6X is able to reach 24 Gbps.

Just to talk about this future memory, the company has also indicated that long before this happens, mobile devices will receive memory chips next year. LPDDR5X at 8500MHz in options up to 32 GB of capacity.

In addition to the 36Gbps Samsung GDDR7, there will be V-NAND memory chips with +1,000 stacks

SamsungSSD

Unfortunately, Samsung GDDR7 and LPDDR5X memory at 8.5 Gbps, the information has not been extended. At least they indicated that the 8th generation memory chip Samsung V-NAND will arrive at the end of this year to reach 1 TB capacity. This implies a 42% improvement in density over the previous generation, and almost double that of the rest of the industry.

Among other stories, he indicated that the 9th generation of its V-NAND memory chips will enter mass production in 2024. Even with a much more distant vision, a few 1,000-stage V-NAND memory chips are planned for 2030, managing to squeeze a large amount of storage into a very small space, and all while increasing data transfer speeds.

10nm 5th Generation RAM

Samsung GDDR7

To end the relevant information announced by the company, it announced its future DRAM memory chips at a manufacturing process 1b (10 nm), which are still under development. As revealed, mass production is planned for some time in next year (2023). As for future memory chips with more advanced manufacturing processes, the company says it is developing “disruptive solutionsin terms of modeling, materials, and architecture, with technology like what he calls “High-K” material. So yeah, something we won’t see for a few years.

Beyond conventional DRAM memory, Samsung has also highlighted the importance of bespoke DRAM solutions such as HBM-PIM, AXDIMM and CXL, which can drive system-level innovation to better manage the world’s explosive data growth. Of course, that was the end of the information they had to provide.

“One trillion gigabytes is the total amount of memory Samsung has manufactured since its inception over 40 years ago. About half of that trillion has been produced in the last three years alone, indicating how fast memory is progressing. memory bandwidth, capacity, and power efficiency enable new platforms, and these, in turn, further drive innovation in semiconductors, we will increasingly drive a level of higher integration on the path to digital co-evolution,” said Jung-bae Lee, President and Head of Memory Business, Samsung Electronics.

Undoubtedly impressive figures that show that Samsung has totally put its batteries in, especially following what we saw yesterday with its new long-term plan.

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